研究方向:
在凝聚态物理领域具有丰富的研究经验,研究方向涵盖低维量子结构、量子霍尔效应、拓扑绝缘体和半金属、半导体物理与器件、纳米磁学和自旋电子学,擅长极低温和强磁场条件下的电子输运和谱学研究。
主要工作成果:
在固态系统的量子输运性质及其调控、以及自旋探测及操控等方面取得了一系列成果,主要包括:
利用半导体霍尔磁强计测量了直径为5 nm的单个纳米颗粒的磁性;
把一维光子晶体与半导体量子点集成,实现了对法拉第旋转效应的显著放大;
在量子霍尔物理研究中,阐明了半填充朗道能级电子自旋转变的本质,发展了全电学操控和探测原子核自旋的新方法;
提出了利用钛酸锶衬底外延生长三维拓扑绝缘体薄膜,在国际上率先实现了利用栅压对拓扑绝缘体化学势的大范围调控;
利用反弱局域效应对拓扑绝缘体表面态输运进行探测并深入研究了拓扑绝缘体的电子输运性质;
利用安德烈夫反射谱证明了n-HgCr2Se4的单旋金属性(half-metallicity)。
代表性论文
[1] G. Shi et al., Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators. Nature Communications 14, 2596 (2023).
[2] Y. H. Liu et al., Gate-Tunable Multiband Transport in ZrTe5 Thin Devices. Nano Letters 23, 5334−5341 (2023).
[3] M. J. Zhang et al., Tuning Quantum Phase Transitions at Half Filling in 3L-MoTe2/ WSe2 Moiré Superlattices. Physical. Review X 12, 041015 (2022).
[4] S. Yang et al., Unconventional Temperature dependence of the anomalous Hall effect in HgCr2Se4. Physical Review Letters 123, 096601 (2019).
[5] N. Liu et al., Two-component anomalous Hall effect in a magnetically doped topological insulator. Nature Communications 9, 1282 (2018).
[6] J. Liao et al., Enhanced electron dephasing in three-dimensional topological insulators. Nature Communications 8, 16071 (2017).
[7] J. Liao et al., Observation of Anderson localization in ultrathin films of three-dimensional topological insulators. Physical Review Letters 114, 216601 (2015).
[8] T. Guan et al., Evidence for half-metallicity in n-type HgCr2Se4. Physical Review Letters 115, 087002 (2015).
[9] J. Chen et al., Gate voltage control of chemical potential and weak antilocalization in Bi2Se3. Physical Review Letters 105, 176602 (2010).
[10] Y. Q. Li et al., Nature of the Spin Transition in the Half-filled Landau Level, Physical Review Letters 102, 046803 (2009).